DS1258W-100#【PDF 8/9 页】IC NVSRAM 2MBIT 100NS 40DIP

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DS1258W

NOTES:

1) W E is high for a Read Cycle.

2) OE = V IH or V IL . If OE = V IH during write cycle, the output buffers remain in a high impedance s tate .

3) t WP is specified as the logical AND of CEU or CEL and WE . t WP is measured from the latter of CEU ,

CEL or WE going low to the earlier of CEU , CEL or WE going high.

4) t DS is measured from the earlier of CEU or CEL or WE going high.

5) These parameters are sampled with a 5pF load and are not 100% tested.

6) If the CEU or CEL low transition occurs simultaneously with or later than the WE low transition in

the output buffers remain in a high impedance state during this period.

7) If the CEU or CEL high transition occurs prior to or simultaneously with the WE high transition, the

output buffers remain in high impedance state during this period.

8) If WE is low or the WE low transition occurs prior to or simultaneously with the CEU or CEL low

transition, the output buffers remain in a high impedance state during this period.

9) Each DS1258W has a built-in switch that disconnects the lithium source until V CC is first applied by

the user. The expected t DR is defined as accumulative time in the absence of V CC starting from the

time power is first applied by the user.

10) All AC and DC electrical characteristics are valid over the full operating temperature range. For

commercial products, this range is 0 to +70 ° C. For industrial products, this range is -40 ° C to +85 ° C.

11) In a power-down condition the voltage on any pin may not exceed the voltage on V CC .

12) t WR1 , t DH1 are measured from WE going high.

13) t WR2 , t DH2 are measured from CEU OR CEL going high.

14) DS1258W DIP modules are recognized by Underwriters Laboratory (U.L. ? ) under file E99151.

DC TEST CONDITIONS

Outputs Open

Cycle = 200ns

All voltages are referenced to ground

AC TEST CONDITIONS

Output Load: 100pF + 1TTL Gate

Input Pulse Levels:

0.0V to 2.7V

Timing Measurement Reference Levels

Input: 1.5V

Output: 1.5V

Input pulse Rise and Fall Times: 5ns

ORDERING INFORMATION

Part Number

Temperature Range

Supply

Tolerance

Pin/Package

Speed Grade

DS1258W-100 0°C to +70°C

DS1258W-100# 0°C to +70°C

DS1258W-100IND -40°C to +85°C

DS1258W-100IND# -40°C to +85°C

DS1258W-150 0°C to +70°C

DS1258W-150# 0°C to +70°C

# Denotes RoHS-compliant product.

3.3V ± 0.3V

40 / 740 EMOD

100ns

150ns

* DS9034PC or DS9034PCI (PowerCap) required. Must be ordered separately.

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DS1258W-100IND 功能描述:NVRAM RoHS:否制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube

DS1258W-100-IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile

DS1258W-100IND# 功能描述:NVRAM RoHS:否制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube

DS1258W-150 功能描述:NVRAM RoHS:否制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube

DS1258W-150# 功能描述:NVRAM RoHS:否制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube

DS1258W-150-IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile

DS1258WP-100 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile

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